研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2019/07
形態種別	学術雑誌
査読	査読あり
標題	Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using ¹⁰B ions.
執筆形態	共著
掲載誌名	Nuclear Instruments and Methods B (Available online 5 March 2018)
掲載区分	国外
出版社・発行元	Elsevier
巻・号・頁	450,pp.118
担当区分	筆頭著者,責任著者
著者・共著者	Y. Hoshino*, T. Toyohara, S. Takada, G. Yachida, J. Nakata
概要	We quantitatively investigated the thickness fluctuation in nanometer order observed in an ultrathin silicon-on-insulator (SOI) film separated by a shallow oxygen ion implantation in a silicon substrate by classical Rutherford backscattering spectrometry (RBS). We first show that the interfacial fluctuation in nanometer scale cannot be identified by the conventional RBS with high-energy MeV He ions due to poor depth resolution. We then explore the possibility of the improvement in the depth resolution by using the primary ions of relatively heavy 10B projectiles combined with a grazing geometry.