研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2019/12
形態種別	学術雑誌
査読	査読あり
標題	The sputtering yield of crystalline Si(100) surface by monoatomic and diatomic nitrogen ions impact.
執筆形態	共著
掲載誌名	Nuclear Instruments and Methods B (Available online 15 December 2018)
掲載区分	国外
巻・号・頁	460,pp.155
担当区分	筆頭著者,責任著者
著者・共著者	Y. Hoshino* and G. Yachida
概要	We have investigated the sputtering rate of thin crystalline silicon film forming silicon-on-insulator structure impinged by atomic and molecular nitrogen ions with medium energies of 25, 50, and 100 keV/(N atom) at several incident angles of 0, 30, 45, and 60^o. The thickness of the surface silicon layer after ion irradiation was quantitatively estimated by Rutherford backscattering spectroscopy using 2.56 MeV ¹⁰B²⁺ ions with a grazing angle geometry to accurately analyze the thickness decrement in several nanometers for ultrathin Si layers. The sputtering rates were compared with a full-cascade TRIM simulation based on a binary collision approximation.