研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2019/02
形態種別	学術雑誌
査読	査読あり
標題	Epitaxial growth of deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization with ion beam mixing.
執筆形態	共著
掲載誌名	Japanese Journal of Applied Physics
掲載区分	国外
巻・号・頁	58,pp.035501/1-7
担当区分	責任著者
著者・共著者	G. Yachida, Y. Hoshino*, J. Nakata
概要	We have investigated the crystallization process of an amorphous Si layer deposited on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization (IBIEC) combined with the ion beam mixing (IBMX) method, aiming at the clarification of the essential IBMX effect on crystallization. In this study, we deposited a 10−15 nm thick amorphous Si layer on clean and two kinds of H-terminated Si(001) surfaces of dihydride (DH) and monohydride (MH), and then carried out the IBMX by 10-keV Si+ ion irradiation with a fluence of 1×10¹⁵ ions cm⁻² at RT near the amorphous/crystalline interface followed by the IBIEC treatment by 180-keV Ar+ ion irradiation with fluences of 5×10¹⁵ and 1×10¹⁶ ions cm⁻² at 300C-500C. The thickness of the crystallized layer was quantitatively measured by the Rutherford backscattering channeling method.