研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2019/03
形態種別	大学・研究所等紀要
標題	THE EPITAXIAL GROWTH OF AMORPHOUS Si LAYER DEPOSITED ON HYDROGEN-TERMINATED SURFACES USING ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION WITH ION BEAM MIXING.
執筆形態	共著
掲載誌名	Proceedings of the 37th Symposium on Materials Science and Engineering Research Center of Ion Beam T
掲載区分	国内
出版社・発行元	Hosei University
巻・号・頁	37
担当区分	責任著者
著者・共著者	G. Yachida, Y. Hoshino*, J. Nakata
概要	We have investigated the crystallization process of an amorphous Si (a-Si) layer deposited on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization (IBIEC) combined with ion beam mixing (IBMX) aiming at the clarification of the substitutional IBMX effect on the crystallization process. We firstly deposited a-Si layer on two kinds of hydrogen-terminated Si(001) surfaces of dihydride (DH) and monohydride (MH), and then carried out the IBMX by 10-keV Si+ ion irradiation with a fluence of 1×10¹⁵ ions cm^-2 at room temperature near the amorphous/crystalline interface followed by the IBIEC treatment by 180-keV Ar+ ion irradiation with a fluence of 1×1016 ions cm-2 at 300 and 500ºC. The crystallization rate of a-Si layer was analyzed by Rutherford backscattering spectrometry with 2.56 MeV ¹⁰B²⁺ projectiles under the [001]-aligned geometry.