研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2020/02
形態種別	学術雑誌
査読	査読あり
標題	Electrical properties and conduction mechanisms of heavily B-doped type IIa diamond formed by B ion implantation: effect of temperatures during ion implantation and postannealing upon electrical conduction.
執筆形態	共著
掲載誌名	Japanese Journal of Applied Physics
掲載区分	国外
巻・号・頁	59,pp.21003/1-8
担当区分	責任著者
著者・共著者	Yuhei Seki, Yasushi Hoshino*, Jyoji Nakata
概要	We have studied the electrical properties of B-implanted type-IIa CVD diamond substrates. The 11B+ ion implantation was performed at RT with 5-60 keV energy for 4E14/cm2 dose, to obtain a flat B concentration of 4E19/cm3 to the 0.2μm depth. It was annealed at low-temperature of 1150°C and 1300°C. We measured the electrical properties of carrier concentration, Hall mobility, doping efficiency and compensation ratio by Hall effect measurement. The carrier concentrations were estimated by fitting the theoretically calculated ones to the experimentally observed ones. The doping efficiency was greatly increased to the 60% of the implanted B concentration, for the sample implanted at RT followed by 1150°C annealing. The measured Hall mobility at RT was realized to higher than 100 cm2/V/sec. The activation energies were 0.34 eV for the 1150C-annealed and 0.31eV for the 1300°C-annealed samples. The p-type conductivity was confirmed at wide temperature range from -70 to 800°C for both samples.