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ホシノ ヤスシ
Hoshino Yasushi 星野 靖 所属 神奈川大学 理学部 理学科 神奈川大学大学院 理学研究科 理学専攻（物理学領域） 職種 准教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2023/02 |
| 形態種別 | 学術雑誌 |
| 査読 | 査読あり |
| 標題 | 1651-V 3.6×105 On/off Ratio All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond. |
| 執筆形態 | 共著 |
| 掲載誌名 | Electron Device Letters |
| 掲載区分 | 国外 |
| 出版社・発行元 | IEEE |
| 巻・号・頁 | 44(2),pp.293-296 |
| 著者・共著者 | Niloy Chandra Saha, Yuya Irie, Yuhei Seki, Yasushi Hoshino, Jyoji Nakata, Seong-Woo Kim, Toshiyuki Oishi, and Makoto Kasu |
| 概要 | In this letter, we have reported a lateral diamond Schottky barrier diode (SBD) that was fabri- cated on a heteroepitaxial diamond substrate using all ion-implantation processes. The SBD exhibited a lower reverse leakage current, which resulted in an unprecedent- edly high rectification ratio of 3.6 × 105 when compared to ion-implanted diamond diodes. The reverse breakdown voltage was measured to be 1.65 kV- the highest measure- ment ever reported among ion-implanted diamond devices. In addition, the ideality factor and Schottky barrier height were determined as 4.9 and 1.4 eV, respectively, under the forward bias conditions. This study revealed the improve- ment of ion-implanted diamond SBD by using high-quality heteroepitaxial diamond substrates and low channel doping concentration. |
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