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ホシノ ヤスシ
Hoshino Yasushi 星野 靖 所属 神奈川大学 理学部 理学科 神奈川大学大学院 理学研究科 理学専攻（物理学領域） 職種 准教授 |
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| 言語種別 | 英語 |
| 発行・発表の年月 | 2023/04 |
| 形態種別 | 学術雑誌 |
| 査読 | 査読あり |
| 標題 | The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure. |
| 執筆形態 | 共著 |
| 掲載誌名 | Japanese Journal of Applied Physics (rapid communication) |
| 掲載区分 | 国外 |
| 出版社・発行元 | IOP |
| 巻・号・頁 | 62(4),pp.040902/1--4 |
| 著者・共著者 | Yuhei Seki, Niloy Saha, Seiya Shigematsu, Yasushi Hoshino, Jyoji Nakata, Toshiyuki Oishi, Makoto Kasu |
| 概要 | In this study, we fabricated p-type diamond Schottky barrier diodes (SBD) and performed selective B doping for the p-type channel and Ohmic region by double ion implantation. SBD were redesigned in the configuration and shape of Ohmic and Schottky electrodes to improve device characteristics. The fabricated device exhibited a rectification ratio of approximately 2400 because of decreasing the parasitic resistance to 2.7 × 107 Ω and the ideality factor to 2.7. The Schottky barrier height was obtained to be 1.04 eV. It is indicated that the diamond SBD fabricated only by B ion implantation is improved by refinement of the electrode structure. |
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