研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2020/03
形態種別	大学・研究所等紀要
標題	REALIZATION OF P-TYPE CONDUCTIVE LAYER ON TYPE IIA CVD DIAMOND BY B+ ION IMPLANTATION AT ROOM TEMPERATURE FOLLOWED BY 1150°C AND 1300°C ANNEALING.
執筆形態	共著
掲載誌名	Proceedings of the 38-th Symposium of ion beam engineering, Hosei University
掲載区分	国内
出版社・発行元	Hosei University
巻・号・頁	38
担当区分	責任著者
著者・共著者	Yuhei Seki, Yasushi Hoshino*, Jyoji Nakata
概要	We have investigated the electrical properties of heavily B-doped type IIa diamond introduced by ion implantation at room temperature with a flat impurity concentration of ~200 ppm, followed by thermal annealing at 1150 and 1300°C. We confirmed p-type conductivity and typical activation energy of acceptor B in diamond at wide temperatures range from 173 to 1073 K. The doping efficiency for the sample after the 1150°C annealing was realized to be 78%, which is the best value ever reported. The Hall mobility around room temperature was realized to be higher than 100 cm2/Vs. It is consequently revealed that at least room temperature B-implantation followed by above 1150°C annealing is sufficiently effective for the electrical activation of B doped in high quality diamond.