研究者情報 | 神奈川大学

ホシノ　ヤスシ Hoshino Yasushi 星野　靖所属神奈川大学理学部理学科神奈川大学大学院理学研究科理学専攻（物理学領域）職種准教授
言語種別	英語
発行・発表の年月	2020/03
形態種別	大学・研究所等紀要
標題	ELECTRICAL PROPERTIES OF DIAMOND FORMED BY P+ ION IMPLANTATION AT 900°C AND ROOM TEMPERATURE FOLLOWED BY 1150°C ANNEALING.
執筆形態	共著
掲載誌名	Proceedings of the 38-th Symposium of ion beam engineering, Hosei University
掲載区分	国内
出版社・発行元	Hosei University
巻・号・頁	38
担当区分	責任著者
著者・共著者	Toshiya Inagaki, Yuhei Seki, Yasushi Hoshino*, and Jyoji Nakata
概要	We have investigated the electrical properties of P+-implanted type IIa diamond substrates to form n-type diamond semiconductors. In this study, P+ ions were implanted at 900°C and room temperature (RT), followed by 1150°C annealing to activate the implanted P atoms. The sheet resistances and Hall effect were measured. The activation energy evaluated from the dependence of sheet resistance on the inverse absolute-temperature was estimated to be 0.6 eV from 573 K to 873 K for the P-implanted sample at 900°C. The sheet resistance of the RT-implanted samples was lower than that of the 900°C-implanted ones at all measured temperatures. However, n-type conduction was not clearly observed in the Hall effect measurements for all the samples. It is consequently suggested that primary and secondary defects formed during hot implantation and after post annealing play an important role in carrier motion in the diamond substrate.