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ホシノ ヤスシ
Hoshino Yasushi 星野 靖 所属 神奈川大学 理学部 理学科 神奈川大学大学院 理学研究科 理学専攻（物理学領域） 職種 准教授 |
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| 発表年月日 | 2020/12/04 |
| 発表テーマ | Crystallization of thin amorphous Si layer by electron or ion beam irradiation: effect of electronic energy deposition |
| 発表学会名 | 第21回「イオンビームによる表面・界面の解析と改質」特別研究会 |
| 主催者 | 応用物理学会・薄膜表面物理分科会 |
| 学会区分 | 研究会・シンポジウム等 |
| 発表形式 | 口頭（一般） |
| 単独共同区分 | 共同 |
| 開催地名 | 京都大学 |
| 発表者・共同発表者 | Yasushi Hoshino, Atsushi Kinomura, and Jyoji Nakata |
| 概要 | It is known that amorphous Si layer formed on a crystalline Si substrate is effectively crystallized by high-energy ion irradiation at relatively low temperature. Here, point defects such as vacancy and interstitial pairs created by elastic collisions in beam irradiation plays an important role in the low temperature crystallization process. It is in addition pointed out that electron-hole pair excited by electronic inelastic scattering probably contributes to the single crystallization so far. In this study, we investigated the effect of the inelastic energy deposition to beam-induced epitaxial crystallization by comparing the epitaxial crystallization by the high-energy electron to that by proton irradiation. |
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