1.
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Papers
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Photoluminescence enhancement from hot nitrogen-ion implanted Si quantum dots embedded within SiO2 layer
(Collaboration)
2024/01
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2.
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Papers
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Near infrared photoluminescence of Si1-xGex
quantum dots fabricated by double hot Ge+/
Si+ implantation into SiO2 layer
(Collaboration)
2023/04
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3.
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Papers
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Group-IV-semiconductor quantum-dots in thermal SiO2 layer fabricated by hot-ion implantation technique: different wavelength photon emissions
(Collaboration)
2021/02
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4.
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Papers
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Passivation of cut edges of crystalline silicon by heat treatment in liquid water
(Collaboration)
2023/04
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5.
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Papers
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Influence of High Temperature N2 Annealing on Photoluminescence of SiC and Si Quantum Dots in SiO2 Layer
(Collaboration)
2022/12
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6.
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Papers
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Near-IR and UV Photon Emissions from SiGe- and C-Quantum-Dots Fabricated by Hot-Ion Implantation into Si-Oxide Layers
(Collaboration)
2022/09
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7.
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Papers
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Physical mechanism for photon emissions from group-IV-semiconductor quantum-dots in quartz-glass and thermal-oxide layers
(Collaboration)
2022/02
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8.
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Papers
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Si surface-orientation dependence of SiC-dot formation in bulk-Si substrate using hot-C+-ion implantation technique
(Collaboration)
2022/02
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9.
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Papers
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Enhancement of Photon Emissions from Group-IV-Semiconductor Quantum-Dots in Quartz and Thermal-Oxide Layers
(Collaboration)
2021/09
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10.
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Papers
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Different Wavelength Photon Emissions from Group-IV-Semiconductor Quantum-Dots Fabricated by Hot-Ion Implantation Technique
(Collaboration)
2020/09
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11.
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Papers
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Non-Destructive 9.35GHz Microwave Sensing System for Investigating Electrical Properties of Silicon
(Collaboration)
2020/09
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12.
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Papers
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SiC Quantum Dot Formation in SiO2 Layer using Double Hot-Si+/C+-Ion Implantation Technique
(Collaboration)
2020/02
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13.
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Papers
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SiC Quantum Dots in Si-Oxide Layer Fabricated by Double Hot-Si+/C+-Ion Implantation Technique
(Collaboration)
2019/09
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14.
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Papers
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SiC nano-dot formation in bulk-Si substrate using hot-C+-ion implantation process
(Collaboration)
2019/07
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15.
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Papers
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Si Surface Orientation Dependence of SiC Nano-Dot Formation in Hot-C+-Ion Implanted Bulk-Si Substrate
(Collaboration)
2019/06
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16.
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Papers
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SiC nanodot formation in amorphous-Si and poly-Si substrates using a hot-C+-ion implantation technique
(Collaboration)
2019/02
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17.
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Papers
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SiC Dots in Amorphous-Si and Poly-Si Substrates
Fabricated by Hot-C+ -Ion Implantation
(Collaboration)
2018/09
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18.
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Papers
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SiC Nano-Dot Controlled by Hot-C+-Ion Implantation Conditions in Bulk-Si Substrate for Photonic Devices
(Collaboration)
2018/06
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19.
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Papers
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Nano-SiC region formation in (100)Si-on-insulator substrate: Optimization of hot-C+-ion implantation process to improve photoluminescence intensity
(Collaboration)
2018/03
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20.
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Papers
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Hot-C+-Ion Implantation Optimization for Forming Nano-SiC Region at Surface (100)SOI Substrate
(Collaboration)
2017/09
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21.
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Papers
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SiC Nano-Dots in Bulk-Si Substrate Fabricated by Hot-C+-Ion Implantation Technique
(Collaboration)
2017/09
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22.
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Papers
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Material structure of two-/three-dimensional Si-C layers
fabricated by hot-C+-ion implantation into Si-on-insulator substrate
(Collaboration)
2017/03
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23.
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Papers
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Novel Band Structure Modulations in Two/Three-Dimensional Silicon Carbon Alloys
(Collaboration)
2016/09
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24.
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Papers
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C-atom-induced bandgap modulation in two-dimensional (100) silicon carbon alloys
(Collaboration)
2016/03
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25.
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Papers
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Experimental study on interface region of two-dimensional Si Layers using forming gas annealing
(Collaboration)
2016/03
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26.
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Papers
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Heat treatment in 110 C liquid water used for passivating silicon
surfaces
(Collaboration)
2016
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27.
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Papers
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Experimental Study on Interface Region of Two-Dimensional Si Layers
(Collaboration)
2015/09
|
28.
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Papers
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Two Dimensional Si-Based Semiconductor Si1-YCY
: C Atom Induced Band Structure Modulation at Visible Region
(Collaboration)
2015/09
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29.
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Papers
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Impurity doping effects on impurity band structure modulation in two dimensional n+ and p+ Si layers for future CMOS
(Collaboration)
2015/01
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30.
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Papers
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Surface-oxide stress induced band-structure modulation in two-dimensional Si layers
(Collaboration)
2015/01
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31.
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Papers
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Laser annealing of plasma-damaged silicon surface
(Collaboration)
2015
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32.
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Papers
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Passivation of silicon surfaces by heat treatment in liquid water at 110 °C
(Collaboration)
2015
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33.
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Papers
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Photoinduced carrier annihilation in silicon pn junction
(Collaboration)
2015
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34.
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Papers
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Impact of Surface Oxide Layer on Band Structure Modulation
in Si Quantum W ell Structures
(Collaboration)
2014/09
|
35.
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Papers
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n+/p+-Single Doping Effects on Impurity Band Structure Modulation
in Two Dimens ional Si Layers
(Collaboration)
2014/09
|
36.
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Papers
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Crystal direction dependence of quantum confinement effects of two-dimensional Si layers fabricated on silicon-on-quartz substrates: modulation of phonon spectra and energy-band structures
(Collaboration)
2014/04
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37.
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Papers
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Quantum confinement effects in doped two-dimensional Si layers: novel device design
for two-dimensional pn-junction structures
(Collaboration)
2014/04
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38.
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Papers
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Anisotropic Phonon-Confinement-Effects/Band-Structure-Modulation of Two-Dimensional Si Layers Fabricated on Silicon-on-Quartz Substrates
(Collaboration)
2013/09
|
39.
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Papers
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Passivation of Silicon Surface by Laser Rapid Heating
(Collaboration)
2013/09
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40.
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Papers
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Physical Limitation of pn Junction in Two Dimensional Si Layers for Future CMOS
(Collaboration)
2013/09
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41.
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Papers
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Experimental Study on Surface-Orientation/Strain Dependence of Phonon Confinement Effects and Band Structure Modulation in Two-Dimensional Si Layers
(Collaboration)
2013/04
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42.
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Papers
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Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique
(Collaboration)
2013/04
|
43.
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Papers
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Ion Species Dependence of Relaxation Phenomena of Strained SiGe Layers Formed by Ion Implantation Induced Relaxation Technique
(Collaboration)
2012/09
|
44.
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Papers
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Surface-Orientation/Strain Dependence of Quantum Confinement Effects in Si Monolayers for Future CMOS Devices
(Collaboration)
2012/09
|
45.
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Papers
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Postannealing Effects on Strain/Crystal Quality Lateral Source Relaxed/Strained Heterostructures Fabricated by O+ Ion Implantation
(Collaboration)
2012/04
|
46.
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Papers
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Experimental Study of Silicon Monolayers for Future Extremely Thin
Silicon-on-Insulator Devices: Phonon/Band Structures Modulation
Due to Quantum Confinement Effects
(Collaboration)
2012/02
|
47.
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Papers
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Experimental Study of Si Monolayers for Future Extremely-Thin SOIs (ETSOIs): Phonon Confinement Effects and Strain due to Si Bending
(Collaboration)
2011/09
|
48.
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Papers
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Lateral Source Relaxed/Strained Layer Heterostructures for Ballistic CMOS: Physical Relaxation Mechanism for Strained Layers by O+ Ion Implantation
(Collaboration)
2011/09
|
49.
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Papers
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Abrupt Lateral-Source Heterostructures with Lateral-Relaxed/Strained Layers for Ballistic CMOS Transistors Fabricated by Local O+ Ion Induced Relaxation Technique of Strained Substrates
(Collaboration)
2011/04
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50.
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Papers
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Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors
(Collaboration)
2011/02
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51.
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Papers
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Experimental Study of Single Source-Heterojunction MOS Transistors (SHOTs) for Quasi-Ballistic Regime: Optimization of Source-Hetero Structures and Electron Velocity Characteristics at Low Temperature
(Collaboration)
2011/01
|
52.
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Papers
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Performance Variations of Ballistic and Quasi-Ballistic MOSFETs - Analytical Variation Model for Virtual Source Potential and kT-Layer Length -
(Collaboration)
2010/11
|
53.
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Papers
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Abrupt Source Heterostructures with Lateral-Relaxed/Strained Layers for Quasi-Ballistic CMOS Transistors using Lateral Strain Control Technique of Strained Substrates
(Collaboration)
2010/09
|
54.
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Papers
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Source Heterojunction with Relaxed/Strained-Layers for Quasi-Ballistic CMOS Transistors
(Collaboration)
2010/06
|
55.
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Papers
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New Source Heterojunction Structures with Relaxed-/Strained-Semiconductors for Quasi-Ballistic Complementary-Metal-Oxide-Semiconductor (CMOS) Transistors: Relaxation Technique of Strained-Substrates and Design of Sub-10nm Devices
(Collaboration)
2010/04
|
56.
|
Papers
|
Reduction of Thermal Oxidation Rate in Fine Silicon Pattern
(Collaboration)
1983
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5 display
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All display(56)
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