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1.
|
Papers
|
Light B doping by ion implantation into high purity heteroepitaxial diamond:
(Collaboration)
2024/07
|
|
2.
|
Papers
|
DMICA: exploring Dark Matter in natural MICA 2024 proceedings:
(Collaboration)
2024/05
|
|
3.
|
Papers
|
Quantitative characterization of occupational sites of implanted P atoms in diamond.
(Collaboration)
2024/05
|
|
4.
|
Papers
|
Electrical characterization of lightly B ion-implanted hetero-epitaxial diamond.
(Collaboration)
2024/03
|
|
5.
|
Papers
|
Optimization of Activation Annealing Condition for Boron-Implanted Diamond
(Collaboration)
2023/08
|
|
6.
|
Papers
|
Local Atomic Structures around Implanted Phosphorus Atoms in Diamond Analyzed by X-ray Absorption Near Edge Structure.
(Collaboration)
2023/07
|
|
7.
|
Papers
|
Mineral Detection of Neutrinos and Dark Matter: A White paper.
(Collaboration)
2023/07
|
|
8.
|
Papers
|
The improvement of Schottky barrier diodes fabricated only by B ion implantation doping accomplished by refinement of the electrode structure.
(Collaboration)
2023/04
|
|
9.
|
Papers
|
1651-V 3.6×105 On/off Ratio All-ion-implanted Schottky Barrier Diode on Heteroepitaxial Diamond.
(Collaboration)
2023/02
|
|
10.
|
Papers
|
Morphological changes of nanostructures on silicon induced by C60-ion irradiation.
(Collaboration)
2022/11
|
|
11.
|
Papers
|
Local structures of phosphorus atoms implanted in crystalline diamond.
(Collaboration)
2022/10
|
|
12.
|
Papers
|
CURRENT-VOLTAGE PROPERTIES OF SCHOTTKY CONTACT FORMED BY COPPER LAYER DEPOSITED ON ION-IMPLANTED P-TYPE DIAMONDS.
(Collaboration)
2022/03
|
|
13.
|
Papers
|
Temperature and Ion-velocity Dependence of Crystal Sensitivity of Ultra-fine-crystal Nuclear-emulsion Plate.
(Collaboration)
2021/10
|
|
14.
|
Papers
|
Schottky Barrier Diodes Fabricated on High-purity Type-IIa CVD Diamond Substrates using an All-ion-implantation Process.
(Collaboration)
2021/04
|
|
15.
|
Papers
|
Electrical Properties of IIa-Type Diamond Substrates Implanted with n-Type Dopant Elements and Those After Annealing
(Collaboration)
2020/11
|
|
16.
|
Papers
|
Application Research to Life Science and Surface Interface Engineering by High-Energy Cluster Beams
(Collaboration)
2020/06
|
|
17.
|
Papers
|
ELECTRICAL PROPERTIES OF DIAMOND FORMED BY P+ ION IMPLANTATION AT 900°C AND ROOM TEMPERATURE FOLLOWED BY 1150°C ANNEALING.
(Collaboration)
2020/03
|
|
18.
|
Papers
|
REALIZATION OF P-TYPE CONDUCTIVE LAYER ON TYPE IIA CVD DIAMOND BY B+ ION IMPLANTATION AT ROOM TEMPERATURE FOLLOWED BY 1150°C AND 1300°C ANNEALING.
(Collaboration)
2020/03
|
|
19.
|
Papers
|
Electrical properties and conduction mechanisms of heavily B-doped type IIa diamond formed by B ion implantation: effect of temperatures during ion implantation and postannealing upon electrical conduction.
(Collaboration)
2020/02
|
|
20.
|
Papers
|
The sputtering yield of crystalline Si(100) surface by monoatomic and diatomic nitrogen ions impact.
(Collaboration)
2019/12
|
|
21.
|
Papers
|
Remarkable p-type activation of heavily doped diamond accomplished by boron ion implantation at room temperature and subsequent annealing at relatively low temperatures of 1150 and 1300C.
(Collaboration)
2019/08
|
|
22.
|
Papers
|
Depth profiling of interfacial fluctuation with nanometer order in ultrathin silicon-on-insulator structure by classical Rutherford backscattering using 10B ions.
(Collaboration)
2019/07
|
|
23.
|
Papers
|
Formation of SiC Nanocrystals Aligned at the SiO2/Si Interface Aiming at Sample Preparation for Scanning Tunneling Luminescence Spectroscopy.
(Collaboration)
2019/07
|
|
24.
|
Papers
|
The RBS analysis for a thin amorphous Si layer formed on clean and H-terminated Si(001) surfaces followed by medium-energy IBIEC treatments.
(Collaboration)
2019/07
|
|
25.
|
Papers
|
Surface Structures on Ge and Si Irradiated with C60 Cluster Ion Beams.
(Collaboration)
2019/06
|
|
26.
|
Papers
|
THE EPITAXIAL GROWTH OF AMORPHOUS Si LAYER DEPOSITED ON HYDROGEN-TERMINATED SURFACES USING ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION WITH ION BEAM MIXING.
(Collaboration)
2019/03
|
|
27.
|
Papers
|
THE FORMATION OF ULTRATHIN SiC LAYER BY OXYGEN AND SILICON IMPLANTATION INTO 4H-SiC(0001) SUBSTRATE.
(Collaboration)
2019/03
|
|
28.
|
Papers
|
Epitaxial growth of deposited amorphous Si layer formed on hydrogen-terminated Si(001) surfaces by ion beam induced epitaxial crystallization with ion beam mixing.
(Collaboration)
2019/02
|
|
29.
|
Papers
|
Experimental Physics to Examine Radiation
in Department of Mathematics and Physics in Kanagawa University
(Single)
2018/07
|
|
30.
|
Papers
|
Porous Structure on Ge Surface Formed by C60 Ion Beam Irradiation
(Collaboration)
2018/06
|
|
31.
|
Papers
|
INVESTIGATION OF HOMOEPITAXIAL Si GROWTH DEPOSITED BY ELECTRON BOMBARDMENT ONTO THE Si (100) SUBSTRATE (II)
(Collaboration)
2018/03
|
|
32.
|
Papers
|
Oxygen ion implantation into the crystalline (001)Si substrates through the patterned SiO2 structures
-Evaluation of surface morphology-
(Collaboration)
2018/03
|
|
33.
|
Papers
|
PREPARATION OF SAMPLE FOR STM LUMINESCENCE SPECTROSCOPY OF SINGLE SiC ANOCRYSTAL
USING CT PROBE
(Collaboration)
2018/03
|
|
34.
|
Papers
|
SIMPLIFICATION OF OHMIC ELECTRODE STRUCTURE ON n-TYPE DIAMOND SEMICONDUCTOR SUBSTRATE BY Ar ION IMPLANTATION
(Collaboration)
2018/03
|
|
35.
|
Papers
|
Epitaxial Growth of Si on Hydrogen-Terminated Si(001) Surfaces Induced by Ion Beam irradiation at 300oC
(Collaboration)
2017/07
|
|
36.
|
Papers
|
Diffusion and aggregation process of oxygen embedded around an amorphous/crystal interface of Si(001) studied by molecular dynamics simulation.
(Single)
2017/05
|
|
37.
|
Papers
|
FABRICATION OF THE OPTICAL SYSTEM FOR CL AND PL MEASUREMENT USING CT PROBE WITH HIGH-SPACIAL RESOLUTION
(Collaboration)
2017/03
|
|
38.
|
Papers
|
INVESTIGATION OF HOMOEPITAXIAL Si GROWTH DEPOSITED BY ELECTRON BOMBARDMENT ONTO THE Si(100) SUBSTRATE
(Collaboration)
2017/03
|
|
39.
|
Papers
|
WIMP tracking with cryogenic nuclear emulsion.
(Collaboration)
2017/01
|
|
40.
|
Papers
|
A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+ implantation.
(Collaboration)
2016/07
|
|
41.
|
Papers
|
Synthesis of a Thin Buried Oxide Layer by High Temperature Oxygen Implantation in a Silicon Substrate
- Effect of High Temperature Implantation -
(Collaboration)
2016/07
|
|
42.
|
Papers
|
Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation.
(Collaboration)
2016/06
|
|
43.
|
Papers
|
Formation of SIMOX-SOI structure by high-temperature oxygen implantation.
(Collaboration)
2015/12
|
|
44.
|
Papers
|
Silicide Synthesis by Fe+ Implantation in Silicon Substrate
(Collaboration)
2015/07
|
|
45.
|
Papers
|
Formation of Co nano-particles for CNT growth using all-vacuum pcoresses
(Collaboration)
2015/03
|
|
46.
|
Papers
|
Formation of ohmic electrodes for diamond semiconductor using Ar ion irradiation
(Collaboration)
2015/03
|
|
47.
|
Papers
|
Analysis of depth redistribution of implanted Fe near SiO2/Si interface.
(Collaboration)
2013/06
|
|
48.
|
Papers
|
Growth of homoepitaxial diamond thin film on the fairly-well flat Ib-type diamond substrate using micro-wave plasma CVD method
(Collaboration)
2013/03
|
|
49.
|
Papers
|
Carbon nanotube growth from catalytic nano-clusters formed by hot-ion-implantation into the SiO2/Si interface
(Collaboration)
2012/07
|
|
50.
|
Papers
|
Analysis of Fe nanoparticles formed near the SiO2/Si interface by hot-ion implantation using RBS and TEM
(Collaboration)
2012/03
|
|
51.
|
Papers
|
Growth of Single-Walled Carbon Nanotubes from Nano-clusters Formed in SiO2-layer during Fe Hot-ion-Implantation
(Collaboration)
2012/01
|
|
52.
|
Papers
|
Graphene on SiC(0001) and SiC(000-1) surfaces grown via Ni-silicidation reactions
(Collaboration)
2011/05
|
|
53.
|
Papers
|
Characterization of diamond substrates and homoepitaxial microwave- plasma CVD films using various estimation methods
(Collaboration)
2011/03
|
|
54.
|
Papers
|
Characterization of Hot-Implanted Fe near the SiO2/Si Interface
(Collaboration)
2011/03
|
|
55.
|
Papers
|
RBS analysis of Au/(Pt)/Ti multilayer grown on C(001) surfaces
(Collaboration)
2011/03
|
|
56.
|
Papers
|
Interdiffusion analysis of Au/Ti and Au/Pt/Ti electrode structures grown on diamond (001) surface by RBS method
(Collaboration)
2010/07
|
|
57.
|
Papers
|
Graphene on SiC(0001) and SiC(000-1) surfaces grown via Ni-silicidation reactions
(Collaboration)
2010/06
|
|
58.
|
Papers
|
A stable Isotopic tracing study of the growth of silicon carbide nanocrystals at the SiO2/Si interface by CO annealing
(Collaboration)
2009/07
|
|
59.
|
Papers
|
Structure of an Ultrathin Aluminum Oxide Layer Grown on a NiAl (110) Substrate
(Collaboration)
2009/05
|
|
60.
|
Papers
|
Structures of clean and oxygen-adsorbed SiC (000-1)-3×3 surfaces
(Collaboration)
2009/05
|
|
61.
|
Papers
|
The Structure and Growth Process of Au/Si(111) Analyzed by High-resolution Ion Scattering Coupled with Photoelectron Spectroscopy
(Collaboration)
2009/05
|
|
62.
|
Papers
|
Charge exchange of medium energy H and He ions emerging from solid surfaces
(Collaboration)
2009/02
|
|
63.
|
Papers
|
Asymmetric line shapes for medium energy H and He ions undergoing a large-angle collision
(Collaboration)
2008/11
|
|
64.
|
Papers
|
Structures of clean and oxygen-adsorbed SiC(0001) (3×3) surfaces
(Collaboration)
2008/10
|
|
65.
|
Papers
|
The structure and growth process of Au/Si(111) determined by high-energy ion scattering coupled with photoelectron spectroscopy
(Collaboration)
2008/10
|
|
66.
|
Papers
|
Structure of an ultrathin aluminum oxidelayer grown on a NiAl(110) substrate
(Collaboration)
2008/02
|
|
67.
|
Papers
|
Growth of SiO2 on SiC by dry thermal oxidation: Mechanisms
(Collaboration)
2007/10
|
|
68.
|
Papers
|
Atomic and electronic structures of 6H-SiC(000-1) 3×3 surface
(Collaboration)
2007/05
|
|
69.
|
Papers
|
Kinetics of oxynitridation of 6H-SiC(1120) and the interface structure analyzed by ion scattering and photoelectron spectroscopy
(Collaboration)
2007/02
|
|
70.
|
Papers
|
Atomic and Electronic Structures of Ultra-thin Ni-deposited SiC(000-1) 2×2 surface
(Collaboration)
2006/05
|
|
71.
|
Papers
|
Atomic Structure of Si-rich 6H-SiC(000-1)-2×2 Surface
(Collaboration)
2006/05
|
|
72.
|
Papers
|
Initial Growth Processes of Ultra-thin Ni-Layers on Si(111) and Electronic Structure of Epitaxially Grown NiSi2
(Collaboration)
2006/05
|
|
73.
|
Papers
|
Atomic and electronic structures of ultrathin Ni-deposited SiC(000-1) 2×2 surface
(Collaboration)
2005/12
|
|
74.
|
Papers
|
Initial growth processes of ultra-thin Ni layers on Si(111) and electronic structure of eitaxially grown NiSi2
(Collaboration)
2005/08
|
|
75.
|
Papers
|
Atomic scale characterization of HfO2/Al2O3 Thin Films Grown on Nitrided and Oxidized Si Substrates
(Collaboration)
2005/05
|
|
76.
|
Papers
|
Atomic structure of Si-rich 6H-SiC(000-1) 2×2 surface
(Collaboration)
2005/05
|
|
77.
|
Papers
|
Ultrathin Ni layers grown epitaxially on SiC(0001) at room temperature
(Collaboration)
2005/05
|
|
78.
|
Papers
|
Dynamic response of target electrons upon low and medium energy ion impact
(Collaboration)
2005/04
|
|
79.
|
Papers
|
Atomic scale characterization of HfO2/Al2O3 thin films grown on nitrided and oxidized Si substrates
(Collaboration)
2004/12
|
|
80.
|
Papers
|
Oxidized surface structure and oxidation kinetics for C-terminated 6H-SiC(000-1) -2×2 surface
(Collaboration)
2004/10
|
|
81.
|
Papers
|
Inelastic energy loss and spectrum shape for medium energy He ions undergoing a large-angle single collision with Si(111) √3×√3-Sb
(Collaboration)
2004/06
|
|
82.
|
Papers
|
Atomic and Electronic Structures of 6H-SiC(11-20) Surface
(Collaboration)
2004/05
|
|
83.
|
Papers
|
Interfacial reactions between ultra-thin Ni layer and clean 6H-SiC(0001) surface
(Collaboration)
2004/05
|
|
84.
|
Papers
|
Ultrathin Ni layers grown epitaxially on SiC(0001) at room temperature
(Collaboration)
2004/04
|
|
85.
|
Papers
|
Structure change of ultra-thin Ni-deposited 6H-SiC(0001)-R3xR3 surface by post-anneling
(Collaboration)
2003/08
|
|
86.
|
Papers
|
The atomic and electronic structures of 6H-SiC(1120)
(Collaboration)
2003/08
|
|
87.
|
Papers
|
Dynamical response of target electrons on elastic scattering cross sections for heavy-ion impact on a high-Z atom
(Collaboration)
2003/07
|
|
88.
|
Papers
|
Atomic scale characterization of oxidized 6H-SiC(1120) surfaces
(Collaboration)
2003/06
|
|
89.
|
Papers
|
Structure Change of Ni(1ML)/Si(111) by Post-annealing Observed by Atomic Force Microscopy, Ion Scattering and Photoelectron Spectroscopy
(Collaboration)
2003/05
|
|
90.
|
Papers
|
Charge exchange for medium energy He and Ne ions in a large-angle collision at solid surface
(Collaboration)
2003/02
|
|
91.
|
Papers
|
Characterization and control of HfO2/Si(001) interfaces
(Collaboration)
2002/09
|
|
92.
|
Papers
|
Z2- and energy-dependent charge fractions for medium energy He ions after a large-angle single collision at solid surfaces
(Collaboration)
2002/09
|
|
93.
|
Papers
|
Structure change of Ni(1ML)/Si(111) by post-annealing observed by atomic force microscopy, ion scattering and photoelectron spectroscopy
(Collaboration)
2002/06
|
|
94.
|
Papers
|
Initial oxidation of 6H-SiC(0001)-R3xR3 surface studied by ion scattering combined with photoemission induced by synchrotron-radiation-light
(Collaboration)
2002/05
|
|
95.
|
Papers
|
Initial Oxidation of Si(001)-2×1 Surface Studied by Photoelectron Spectroscopy Coupled with Medium Energy Ion Scattering
(Collaboration)
2002/05
|
|
96.
|
Papers
|
Surface structure of Y2O3(9.5mol%)-stabilized ZrO2(001) determined by high-resolution medium energy ion scattering
(Collaboration)
2002/05
|
|
97.
|
Papers
|
Surface structure and dipole moments of RbI(001) determined by high-resolution medium-energy ion scattering
(Collaboration)
2001/11
|
|
98.
|
Papers
|
Charge state of medium-energy He ions after large-angle single collisions
(Collaboration)
2001/10
|
|
99.
|
Papers
|
Initial oxidation of Si(001) 2x1 surface studied by photoelectron spectroscopy coupled with medium energy ion scattering
(Collaboration)
2001/08
|
|
100.
|
Papers
|
Surface structure of Y2O3(9.5 mol%)-stabilized ZrO2(001) determined by high-resolution medium-energy ion scattering
(Collaboration)
2001/08
|
|
101.
|
Papers
|
Lattice dynamics of RbI(001) surface studied by high-resolution medium energy ion scattering and molecular dynamics simulation
(Collaboration)
2001/07
|
|
102.
|
Papers
|
Oxidation processes for Si(111) 7x7 surfaces analyzed in situ by synchrotron-radiation- induced photoemission and medium energy ion scattering
(Collaboration)
2001/07
|
|
103.
|
Papers
|
Initial oxidation of Si(111)-7×7 surfaces studied by photoelectron spectroscopy combined with medium energy ion scattering
(Collaboration)
2001/05
|
|
104.
|
Papers
|
Surface structures of SrTiO3(001) and Ni/SrTiO3(001) studied by medium energy ion scattering and SR-photoelectron spectroscopy
(Collaboration)
2001/05
|
|
105.
|
Papers
|
Dipole moments of the top and second layer ions of RbI(001) surface determining by high-resolution medium energy ion scattering
(Collaboration)
2001/02
|
|
106.
|
Papers
|
Collection of Ziegler's stopping powers of Al, Si and their oxides for MeV He ions
(Collaboration)
2000/11
|
|
107.
|
Papers
|
Initial oxidation of Si(111) 7x7 surfaces studied by photoelectron spectroscopy combined with medium energy ion scattering
(Collaboration)
2000/08
|
|
108.
|
Papers
|
Anomalous surface peaks observed in the backscattering spectra from amorphous Si and SiO2 films for medium energy He ions
(Collaboration)
2000/05
|
|
109.
|
Papers
|
Rumpled relaxations of TiC(001) and TaC(001) determined by high-resolution medium energy ion scattering
(Collaboration)
2000/05
|
|
110.
|
Papers
|
Surface peaks observed for medium energy He ions backscattered from amorphous solids
(Collaboration)
2000/05
|
|
111.
|
Papers
|
Surface structures of SrTiO3(001) and Ni/SrTiO3(001) studied by medium-energy ion scattering and SR-photoelectron spectroscopy
(Collaboration)
2000/05
|
|
112.
|
Papers
|
Rumpled relaxation of TiC(001) and TaC(001) determined by high-resolution medium energy ion scattering spectroscopy
(Collaboration)
2000/01
|
|
113.
|
Other
|
Compensation effect by deep donor center on B-implanted diamond at low concentrations
(Collaboration)
2024/09
|
|
114.
|
Other
|
DMICA: exploring Dark Matter in natural muscovite MICA
(Collaboration)
2024/01
|
|
115.
|
Other
|
Optimization of activation annealing time for diamond doped by B ion implantation
(Collaboration)
2023/09
|
|
116.
|
Other
|
Local Structures of Phosphorus Atom Implanted in Diamond.
(Collaboration)
2022/06
|
|
117.
|
Other
|
Development of Paleo-detectors.
(Collaboration)
2022/05
|
|
118.
|
Other
|
Measurement of self-sputtering yield of high energy tungsten determined from thin film thickness measurement by RBS method
(Collaboration)
2020/09
|
|
119.
|
Other
|
Study on luminescence of AgBr:I nanoscale semiconductor dispersed in neuclear emulsion by low velocity ions
(Collaboration)
2020/09
|
|
120.
|
Other
|
The remarkable p-type conductivity of CVD diamond substrate accomplished by 11B+ ion implantation at room temperature and subsequent annealing at relatively low-temperature of 1150 and 1300°C.
(Collaboration)
2019/09
|
|
121.
|
Other
|
The epitaxial growth of deposited amorphous Si layer on hydrogen-terminated surfaces using ion beam induced epitaxial crystallization with ion beam mixing
(Collaboration)
2018/12
|
|
122.
|
Other
|
The remarkable p-type carrier transport induced by 1000C B and C ion implantation into the IIa diamond substrates followed by 1150C annealing
(Collaboration)
2018/09
|
|
123.
|
Other
|
The sputtering yield of crystalline Si(100) surface by monoatomic and diatomic nitrogen ions impact
(Collaboration)
2018/07
|
|
124.
|
Other
|
The epitaxial growth of deposited amorphous Si layer on hydrogen-terminated surfaces using ion beam mixing treatment
(Collaboration)
2018/06
|
|
125.
|
Other
|
The RBS analysis for a thin amorphous Si layer formed on clean and H-terminated Si(001) surfaces followed by medium-energy IBIEC treatments
(Collaboration)
2017/12
|
|
126.
|
Other
|
Depth profiling of interfacial fluctuation with nanometer order in ultrathin ilicon-on-insulator structure by classical Rutherford backscattering using 10B ions
(Collaboration)
2017/10
|
|
127.
|
Other
|
The RBS analysis for a thin amorphous Si layer formed on clean and H-terminated Si(001) surfaces followed by medium-energy IBIEC treatments
(Collaboration)
2017/10
|
|
128.
|
Other
|
Growth mechanism of cobalt clusters on flat and defect-induced highly-oriented pyrolytic graphite suraces
(Collaboration)
2015/09
|
|
129.
|
Other
|
Formation of SIMOX-SOI structure by high-temperature oxygen implantation
(Collaboration)
2014/09
|
|
130.
|
Other
|
Analysis of depth redistibution of implanted Fe near SiO2/Si interface
(Collaboration)
2012/10
|
|
131.
|
Other
|
Low temperature growth of SWCNT by microwave-plasma-enhanced CVD from hot-ion-implanted catalysts
(Collaboration)
2012/09
|
|
132.
|
Other
|
Carbon nanotube growth from Fe nanoparticle formed by hot-ion-implantation into the SiO2/Si interface
(Collaboration)
2011/05
|
|
133.
|
Other
|
Elemental depth profiles of Au/Pt/Ti films grown on diamond (001) surface studied by Rutherford backscattering spectroscopy
(Collaboration)
2009/11
|
|
134.
|
Other
|
Elemental depth profiles of Au/Pt/Ti films grown on diamond (001) surface studied by Rutherfored backscattering spectroscopy
(Collaboration)
2009/11
|
|
135.
|
Other
|
Narrow nuclear resonance profiling and stable isotopic tracing study of the diffusion and reaction of carbon monoxide moleclues in thermal silica and at its interface with silicon
(Collaboration)
2009/11
|
|
136.
|
Other
|
Narrow Nuclear Resonance Profiling and Stable Isotopic Tracing Study of the Diffusion and Reaction of Carbon Monoxide Molecules in Thermal Siclica and at its Interface with Silicon
(Collaboration)
2009/11
|
|
137.
|
Other
|
Atomic and Electronic Structure of Au/Si(111) Determined by MEIS and SR-PES
(Collaboration)
2008/10
|
|
138.
|
Other
|
The structures of clean and oxygen- and nitrogen- adsorbed 6H-SiC{0001} 3×3 surfaces
(Collaboration)
2007/10
|
|
139.
|
Other
|
Surface characterization of reconstructed 6H-SiC(000-1) and adsorbed structure of oxygen
(Collaboration)
2007/09
|
|
140.
|
Other
|
Atomic and Electronic Structures of Ni Deposited on Si(111) at room temperature and Epitaxially Grown B-type NiSi2(111)/Si(111)
(Collaboration)
2005/12
|
|
141.
|
Other
|
Atomic and electronic structures of ultrathin-Ni-deposited SiC(000-1)-2×2 surface
(Collaboration)
2005/06
|
|
142.
|
Other
|
First-Principles Calculations of Si-rich 2×2 Reconstruction and Oxidation of the C-terminated 6H-SiC(000-1)
(Collaboration)
2004/09
|
|
143.
|
Other
|
Surface structure and oxidation mechanism for Si-rich 6H-SiC(000-1) 2×2 surface
(Collaboration)
2004/09
|
|
144.
|
Other
|
Dynamic Response of Target Electrons upon Low and Medium Energy Ion Impact
(Collaboration)
2004/07
|
|
145.
|
Other
|
Interfacial reactions between ultrathin Ni-layer and 6H-SiC(0001) surface
(Collaboration)
2003/11
|
|
146.
|
Other
|
Epitaxial growth of ultrathin Ni-layer on 6H-SiC(0001) surface
(Collaboration)
2003/10
|
|
147.
|
Other
|
Inelastic energy loss and spectrum shape for medium energy He ions undergoing a large-angle single collision with Si(111)-R3xR3-Sb
(Collaboration)
2003/06
|
|
148.
|
Other
|
Initial oxidation of 6H-SiC(11-20) surface studied by high-resolution MEIS and SR-PES
(Collaboration)
2003/06
|
|
149.
|
Other
|
Charge exchange for medium energy He and Ne ions in a large-angle collision at solid surfaces
(Collaboration)
2002/11
|
|
150.
|
Other
|
Initial Oxidation of 6H-SiC(0001)-√3×√3 Surface Studied by Medium Energy Ion Scattering Combined with SR Photoelectron Spectroscopy
(Collaboration)
2002/11
|
|
151.
|
Other
|
Surface Structure and Initial Oxidation of 6H-SiC(11-20)
(Collaboration)
2002/11
|
|
152.
|
Other
|
Surface structure of 6H-SiC(11-20) studied by medium energy ion scattering and SR-light- induced photoelectron spectroscopy
(Collaboration)
2002/11
|
|
153.
|
Other
|
Oxidation process for Si(111) 7x7 surfaces analyzed in-situ by synchrotron-radiation-induced photoemission and medium energy ion scattering
(Collaboration)
2000/08
|
|
5 display
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All display(153)
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